? semiconductor components industries, llc, 2004 july, 2004 ? rev. 10 1 publication order number: 2n3773/d npn 2n3773*, pnp 2N6609 preferred device complementary silicon power transistors the 2n3773 and 2N6609 are powerbase power transistors designed for high power audio, disk head positioners and other linear applications. these devices can also be used in power switching circuits such as relay or solenoid drivers, dc?dc converters or inverters. features ? pb?free packages are available** ? high safe operating area (100% tested) 150 w @ 100 v ? completely characterized for linear operation ? high dc current gain and low saturation voltage h fe = 15 (min) @ 8.0 a, 4.0 v v ce(sat) = 1.4 v (max) @ i c = 8.0 a, i b = 0.8 a ? for low distortion complementary designs maximum ratings (note 1) rating symbol value unit collector ? emitter voltage v ceo 140 vdc collector ? emitter voltage v cex 160 vdc collector ? base voltage v cbo 160 vdc emitter ? base voltage v ebo 7 vdc collector current ? continuous ? peak (note 2) i c 16 30 adc base current ? continuous ? peak (note 2) i b 4 15 adc total power dissipation @ t a = 25 c derate above 25 c p d 150 0.855 w w/ c operating and storage junction temperature range t j , t stg ?65 to +200 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. indicates jedec registered data. 2. pulse test: pulse width = 5 ms, duty cycle 10%. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 1.17 c/w **for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to?204 case 1?07 *preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com marking diagram 16 a complementary power transistors 140 v, 150 w 2nxxxx mex ayyww xxxx = 3773 or 6609 a = assembly location yy = year ww = work week
npn 2n3773*, pnp 2N6609 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ???? ???? min ??? ??? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics (note 3) ??????????????????????? ? ????????????????????? ? ??????????????????????? collector?emitter breakdown voltage (note 4) (i c = 0.2 adc, i b = 0) ???? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ???? 140 ??? ? ? ? ??? ? ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector?emitter sustaining voltage (note 4) (i c = 0.1 adc, v be(off) = 1.5 vdc, r be = 100 ohms) ???? ? ?? ? ???? v cex(sus) ???? ? ?? ? ???? 160 ??? ? ? ? ??? ? ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector?emitter sustaining voltage (i c = 0.2 adc, r be = 100 ohms) ???? ? ?? ? ???? v cer(sus) ???? ? ?? ? ???? 150 ??? ? ? ? ??? ? ??? ? ? ? ??? vdc ??????????????????????? ??????????????????????? collector cutoff current (note 4) (v ce = 120 vdc, i b = 0) ???? ???? i ceo ???? ???? - ??? ??? 10 ??? ??? madc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector cutoff current (note 4) (v ce = 140 vdc, v be(off) = 1.5 vdc) (v ce = 140 vdc, v be(off) = 1.5 vdc, t c = 150 c) ???? ? ?? ? ? ?? ? ???? i cex ???? ? ?? ? ? ?? ? ???? ? ? ??? ? ? ? ? ? ? ??? 2 10 ??? ? ? ? ? ? ? ??? madc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v cb = 140 vdc, i e = 0) ???? ? ?? ? ???? i cbo ???? ? ?? ? ???? ? ??? ? ? ? ??? 2 ??? ? ? ? ??? madc ??????????????????????? ??????????????????????? emitter cutoff current (note 4) (v be = 7 vdc, i c = 0) ???? ???? i ebo ???? ???? - ??? ??? 5 ??? ??? madc ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? on characteristics (note 3) ??????????????????????? ? ????????????????????? ? ??????????????????????? dc current gain (i c = 8 adc, v ce = 4 vdc) (note 4) (i c = 16 adc, v ce = 4 vdc) ???? ? ?? ? ???? h fe ???? ? ?? ? ???? 15 5 ??? ? ? ? ??? 60 ? ??? ? ? ? ??? ? ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector?emitter saturation voltage (i c = 8 adc, i b = 800 madc) (note 4) (i c = 16 adc, i b = 3.2 adc) ???? ? ?? ? ? ?? ? ???? v ce(sat) ???? ? ?? ? ? ?? ? ???? ? ? ??? ? ? ? ? ? ? ??? 1.4 4 ??? ? ? ? ? ? ? ??? vdc ??????????????????????? ??????????????????????? base-emitter on voltage (note 4) (i c = 8 adc, v ce = 4 vdc) ???? ???? v be(on) ???? ???? e ??? ??? 2.2 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? magnitude of common?emitter small?signal, short?circuit, forward current transfer ratio (i c = 1 a, f = 50 khz) ???? ? ?? ? ? ?? ? ???? |h fe | ???? ? ?? ? ? ?? ? ???? 4 ??? ? ? ? ? ? ? ??? ? ??? ? ? ? ? ? ? ??? ? ??????????????????????? ? ????????????????????? ? ??????????????????????? small?signal current gain (note 4) (i c = 1 adc, v ce = 4 vdc, f = 1 khz) ???? ? ?? ? ???? h fe ???? ? ?? ? ???? 40 ??? ? ? ? ??? ? ??? ? ? ? ??? ? ????????????????????????????????? ????????????????????????????????? second breakdown characteristics ??????????????????????? ??????????????????????? second breakdown collector current with base forward biased t = 1 s (non?repetitive), v ce = 100 v, see figure 12 ???? ???? i s/b ???? ???? 1.5 ??? ??? - ??? ??? adc 3. pulse test: pulse width = 300 s, duty cycle 2%. 4. indicates jedec registered data. ordering information device package shipping 2 2n3773 to?204 100 unit / tray 2n3773g to?204 (pb?free) 100 unit / tray 2N6609 to?204 100 unit / tray 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifi- cations brochure, brd8011/d.
npn 2n3773*, pnp 2N6609 http://onsemi.com 3 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 300 0.2 figure 1. dc current gain i c , collector current (amps) 5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 20 50 30 20 100 70 h fe , dc current gain 150 c 25 c -55 c v ce = 4 v npn pnp i c , collector current (amps) h fe , dc current gain 7.0 10 200 7.0 10 figure 2. dc current gain 150 c 25 c -55 c figure 3. collector saturation region 2.0 0.05 i b , base current (amps) 0 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 1.6 1.2 0.8 0.4 t c = 25 c i c = 4 a i c = 16 a figure 4. collector saturation region 2.0 i b , base current (amps) 0 1.6 1.2 0.8 0.4 t c = 25 c 2.0 0.2 i c , collector current (amps) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 20 1.2 0.4 0 i c /i b = 10 v be(sat) v, voltage (volts) figure 5. aono voltage 1.6 0.8 10 150 c 25 c v ce(sat) 25 c 2.0 i c , collector current (amps) 1.2 0.4 i c /i b = 10 v be(sat) v, voltage (volts) figure 6. aono voltage 1.6 0.8 150 c 25 c v ce(sat) 150 c 25 c v ce = 4 v i c = 4 a i c = 8 a 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 20 7.0 10 300 5.0 50 30 20 100 70 7.0 10 200 i c = 8 a 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 i c = 16 a 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 20 10 150 c
npn 2n3773*, pnp 2N6609 http://onsemi.com 4 30 3.0 figure 7. forward bias safe operating area v ce , collector-emitter voltage (volts) 20 10 5.0 3.0 2.0 1.0 0.5 0.03 5.0 7.0 10 20 30 50 300 bonding wire limit thermal limit @ t c = 25 c, single pulse second breakdown limit 70 0.3 0.2 i c , collector current (amp) dc 10 s 100 s 100 ms 0.1 0.05 100 200 40 s 200 s 1.0 ms 500 ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 7 is based on t j(pk) = 200 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 200 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 80 60 40 0 20 0 40 80 120 160 200 figure 8. power derating t c , case temperature ( c) power derating factor (%) thermal derating
npn 2n3773*, pnp 2N6609 http://onsemi.com 5 package dimensions to?204 (to?3) case 1?07 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ?t? seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t ?q? ?y? 2 1 u l g b v h
npn 2n3773*, pnp 2N6609 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n3773/d powerbase is a registered trademark of semiconductor components industries, llc (scillc). literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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